N. Mohankumar 
Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications 

High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, In As is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on In As III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including In As-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of In As-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the In As device to achieve terahertz frequency regime with proper device parameters.Features: Explains the influence of In As material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.