The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
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Ngôn ngữ Anh ● định dạng EPUB ● Trang 208 ● ISBN 9781351834193 ● Nhà xuất bản CRC Press ● Được phát hành 2017 ● Có thể tải xuống 3 lần ● Tiền tệ EUR ● TÔI 5576808 ● Sao chép bảo vệ Adobe DRM
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